01/99 b-21 2N5460, 2n5461, 2n5462 p-channel silicon junction field-effect transistor absolute maximum ratings at 25?c reverse gate source & reverse gate drain voltage 40 v continuous forward gate current C 10 ma continuous device power dissipation 310 mw power derating 2.8 mw/c toe226aa package dimensions in inches (mm) pin configuration 1 drain, 2 source, 3 gate surface mount smp5460, smp5461, smp5462 at 25c free air temperature: 2N5460 2n5461 2n5462 process pj32 static electrical characteristics min max min max min max unit test conditions gate source breakdown voltage v (br)gss 40 40 40 v i g = 10 a, v ds = ? v gate reverse current i gss 555nav gs = 20 v, v ds = ?v 111av gs = 20 v, v ds = ?v t a = 100c gate source cutoff voltage v gs(off) 0.75 6 1 7.5 1.8 9 v v ds = C 15 v, i d = C 1 a 0.8 4.5 v v ds = C 15 v, i d = C 100 a gate source voltage v gs 0.8 4.5 v v ds = C 15 v, i d = C 200 a 1.5 6 v v ds = C 15 v, i d = C 400 a drain saturation current (pulsed) i dss C 1C 5C 2C 9C 4C 16ma v ds = C 15 v, v gs = ?v dynamic electrical characteristics drain source on resistance r ds(on) 2 0.8 0.4 k v gs = ? v, i d = ? a f = 1 khz common source forward transadmittance |y fs | 1 4 1.5 5 2 6 ms v ds = C 15 v, v gs = ? v f = 1 khz common source output admittance | y os | 757575sv ds = C 15 v, v gs = ? v f = 1 khz common source input capacitance c iss 777pfv ds = C 15 v, v gs = ? v f = 1 mhz common source reverse c rss 222pfv ds = C 15 v, v gs = ? v f = 1 mhz transfer capacitance equivalent short circuit e n 2.5 2.5 2.5 db v ds = C 15 v, v gs = ? v f = 100 hz, input noise voltage bw = 1 hz noise figure nf 115 115 115 nv/ hz v ds = C 15 v, v gs = ? v, f = 100 hz r g = 1 m audio amplifiers general purpose amplifiers 1000 n. shiloh road, garland, tx 75042 (972) 487-1287 fax (972) 276-3375 www.interfet.com databook.fxp 1/13/99 2:09 pm page b-21
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